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【103-1電機系專題演講】演講者:邱舒偉博士(聯亞光電工業股份有限 公司研發部協理) 【102-1】南科超高壓變電所參訪活動 102學年度第1學期創意電路競賽
 
* 師資介紹  
姓名 許世昌
組別 光電與半導體領域
職稱 教授
電話 06-2606123 # 7776
專長 光電元件/半導體製程/固態照明設計
電子信箱 scshei@mail.nutn.edu.tw (教師研究室:ZC204-2)
個人網頁
http://whale.nutn.edu.tw/faculty/teaData.aspx?id=scshei
 
實驗室
固態照明實驗室Solid State Lighting Laboratory
實驗室電話 06-2606123#7851
 
學歷
國立成功大學 電機工程研究所 博士

國立成功大學 電機工程研究所 碩士

國立成功大學 電機工程學系 學士

 
經歷
國立臺南大學 電子工程學系 助理教授 2006.08∼至今
國立臺南大學 研發處產學合作組 組 長 2006.08∼至今
元砷光電科技公司晶粒研發部 協 理 2000.08 - 2006.07
南台科技大學 電機系 助理教授 1997.08 - 2000.07
 
專長及研究領域
1. 半導體磊晶及製程技術
2. 封裝及固態照明技術
3. 光電元件:發光二極體/光檢測器/太陽能電池/雷射二極體/高速電晶體...等
 
榮譽及獎勵 (至少五年內)
1.榮獲2004第七屆傑出光電產品獎:”具静電保護覆晶式高亮度發光二極體”。
2.榮獲2005第八屆傑出光電產品獎:”氮化鎵紫外線指數檢測器”
 
專利 (至少五年內)
1 Daniel Kuo, Samuel Hsu ; USA US 6,515,306,B2 ; 2003/02/04發明; Light Emitting Diode
2 Jinn-Kong Sheu, Daniel Kuo, Samuel Hsu ; USA US 6,712,478,B2 ;2004/05/30發明; Light
Emitting Diode
3 Shih-Chang Shei, Jinn-Kong Sheu; USA US 6,914,286,B2; 2005/06/05發明 LED device, Flip-
Chip LED Package and Light Reflecting Structure
4 Shih-Chang Shei, Jinn-Kong Sheu; USA US 7,105,860,B2; 2006/09/12發明 Flip Chip Light
Emitting Diode Package
5 Shih-Chang Shei, Yen-Wei Chen, Wei-Shou Chen, Chia-Sheng Chang, Hsin-Ming Lo, Chien-
Fu Shen;USA US 7,115,915,B2 2006/10/03發明; Light Emitting Diode
6 Shih-Chang Shei, Jinn-Kong Sheu; USA US 7,151,281,B2; 2006/12/19 發明; Light-Emitting
Diode Structure with Electrostatic Discharge Protection
7 Shih-Chang Shei, Jinn-Kong Sheu; USA US 7,205,648,B2; 2007/04/17發明 Flip-Chip Light-
Emitting Diode Package Structure
8 Ming-Lum Lee, Wei-Chih Lai, Shih-Chang Shei, USA US 7,238,972,B2; 2007/07/03發明
photodetector
9 Shih-Chang Shei, Yen-Wei Chen, Wei-Shou Chen, Chia-Sheng Chang, Hsin-Ming Lo, Chien-
Fu Shen USA US 7,253,013,B2; 2007/08/07發明; Method for Manufacturing Light Emitting Diode
10 郭啟文,許世昌 中華民國 00488088 2002/05/21發明 發光二極體結構
11 許世昌,許進恭 中華民國 I227570 2005/02/01發明 發光二極體封裝結構
12 許世昌,許進恭 中華民國 I229463 2005/03/11發明 具有靜電防護功能的發光二極體結構
13 許生杰,古錦福,洪文慶,許進恭, 許世昌 中華民國 I229464 2005/03/11發明 發光二極體結構
14 許世昌,許進恭 中華民國 I230425 2005/04/01發明 發光二極體之凸塊製程
15 許世昌,許進恭 中華民國 I236103 2005/07/11發明 覆晶式發光二極體封裝結構
16 許世昌,李明倫 中華民國 I240443 2005/09/21發明 發光二極體及其製造方法
17 賴韋志,許世昌, 李明倫 中華民國 I244768 2005/12/01發明 光檢測器
18 洪照俊,許世昌, 中華民國 I246777 2006/01/01發明 光感測器封裝結構
19 鄭朝元,許世昌,吳瑞孔,陳泰佑,黃登龍,許進恭 中華民國 I250664 2006/03/01發明 白光發光二極體
20 許世昌,李明倫 中華民國 I250671 2006/03/01發明 發光二極體及其製造方法
21 許世昌 中華民國 I251357 2006/03/11發明 發光二極體及其製造方法
22 許世昌,許進恭 中華民國 I255051 2006/05/11發明 發光二極體結構
23 許世昌,許進恭 中華民國 I260795 2006/08/21發明 覆晶式發光二極體封裝結構
24 許世昌,李明倫 中華民國 I265646 2006/11/01發明 發光二極體結構
25 許世昌,陳彥瑋陳緯守,張佳勝羅信明,沈建賦 中華民國 I288486 2007/10/11發明 發光二極體及其製造方法



 
重要著作
A、Refereed Paper (1~14篇以臺南大學電子系名義發表)
1. S. J. Chang, W. S. Chen, S. C. Shei,T. K. Ko, C. F. Shen, Y. P. Hsu, C. S. Chang, J. M. Tsai, W. C. Lai, and A. J. Lin, “Highly reliable high-brightness GaN-based flip chip LEDs” To be published in IEEE Tran. Adv. Packaging, 2007 (SCI, EI, IF:1.443)
2. S. C. Shei, J. K. Sheu, and C. F. Shen, “Improved Reliability and ESD Characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes”, IEEE Electron Device Letter., Vol. 28, No. 5, pp. 346-349, May 2007 (SCI,EI,IF:2.716)
3. S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, “Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography” Appl. Phys. Lett., Vol.91, 013504 2007 (SCI,EI,IF:3.977)
4. J. J. Horng, Y. K. Su, S. J. Chang, W. S. Chen and S. C. Shei, “GaN-based power LEDs with CMOS ESD protection circuits”, IEEE Tran. Dev. Mater. Reliab., Vol. 7, No. 2, pp. 340-346, June 2007 (SCI,EI,IF:1.373)
5. J. J. Horng, Y. K. Su, S. J. Chang, T. K. Ko and S. C. Shei, “Nitride-based Schottky barrier sensor module with high electrostatic reliability”, IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 717-719, 2007 (SCI,EI,IF:2.353)
6. S. J. Chang, T. K. Ko, J. K. Sheu, S. C. Shei, W. C. Lai, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, and C. F. Shen, “AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors Grown on Si substrates”, Sensors and Actuators A: Physical, Vol. 135, No. 2, pp. 502-506. 2007 (SCI,EI,IF:1.143)
7. C. F. Shen, S. J. Chang, W. S. Chen, W. S. Chen, T. K. Ko, C. T. Kuo, and S. C. Shei, “Nitride-based high power filp-chip LED with double-side patterned sapphire substrate”, IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 780-782, May 2007 (SCI,EI,IF:2.353)
8. C. F. Shen, S. C. Chang, T. K. Ko, S. C. Shei, W. C. Lai, C. S. Chang, W. S. Chen, S. P. Hung, Y. W. Ku, and R. H. Horng, “Nitride-based high power flip-chip near-UV LEDs with reflective submount”, IET Optoelectron., Vol. 1, No. 1 pp. 27-30. 2007 (SCI,EI,IF:0.632)
9. S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei, and Y. Z. Chiou, “Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes”, Electrochemical and Solid-State Lett., Vol. 10, No. 6, pp. H175-H177. 2007 (SCI,EI,IF:1.163)
10. C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee, C. S. Chang and Y. Z. Chiou, “Nitride-based light emitting diodes with textured sidewalls and pillar waveguides”, IEEE Photon. Technol. Lett., Vol. 18, No. 23, pp. 2517-2519, December 2006 (SCI,EI,IF:2.353)
11. S. J. Chang, C. F. Shen, S. C. Shei, R. W. Chung, S. C. Chang, W. S. Chen T. K. Ko, and J. K. Sheu, “Highly reliable nitride-based LEDs with internal ESD protection diodes”, IEEE Tran. Dev. Mater. Reliab., Vol. 6, No. 3 pp. 442-447, September 2006 (SCI,EI.IF:1.373)
12. T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen, and C. F. Shen, “Nitride-based flip-chip p-i-n photodiodes”, IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 483-487, August 2006 (SCI,EI,IF:1.443)
13. T. K. Ko, S. J. Chang, J. K. Sheu, S. C. Shei, Y. Z. Chiou, M. L. Lee, C. F.Shen, S. P. Chang and K. W. Lin, , "AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers", Semicond. Sci. Technol., Vol. 21, No. 8, pp. 1064-1068. 2006 (SCI,EI,IF:1.586)
14. T. K. Ko, S. C. Shei, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, C. K. Wang, J. K. Sheu, and W. C. Lai, “Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrow-band UV-A photo sensors”, IEEE. Sensors Journal. Vol.6, pp. 964-969, August 2006 (SCI,EI,IF:1.117)
15. S. C. Shei, C. M. Tsai, J. K. Sheu , W. C. Lai, M. L. Lee, C. H. Kuo and Y. K. Su, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes” Jpn. J. Applied Physics, Vol.45, No.4A, pp.2463-2466. 2006 (SCI,EI,IF:1.222)
16. T. K. Ko, S. C. Shei, S. J. Chang, Y. Z. Chiou, R. W. Lin, W. S. Chen, C. F. Shen, C. S. Chang, and K. W. Lin, “InGaN p-i-n UV-A band-pass photodetectors”, IEE. Proc. Optoelectronics, Vol. 153, No. 4, pp. 212-214. 2006 (SCI,EI,IF:0.623)
17. S. J. Chang, W. S. Chen, Y. K. Su, C. S. Chang, Y. C. Lin, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai and S. C. Shei, , “Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors” IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 403-408, August 2006 (SCI,EI,IF:1.443)
18. C. M. Tsai, J. K. Sheu, P. T. Wang, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo and Y. K. Su, "High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD", IEEE Photon. Technol. Lett., Vol. 18, No. 11, pp. 1213-1215, June 2006 (SCI,EI,IF:2.353)
19. W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu and C. F. Shen, "Rapid thermal annealed InGaN/GaN flip-chip LEDs", IEEE Tran. Electron. Dev., Vol. 53, No. 1, pp. 32-37, Jannary. 2006 (SCI,EI,IF:2.052)
20. S. J. Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen and C. F. Shen, “GaN-based p-i-n sensors with ITO contacts”, IEEE Sensors Journal, Vol. 6, No. 2, pp. 406-411, April 2006 (SCI,EI,IF:1.117)
21. T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C. Shei, J. K. Sheu, W. S. Chen, and C. F. Shen “AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers”, Journal of Crystal growth Vol.283,pp.68-71. 2005 (SCI)
22. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. H. Kuo, C. S. Chang and S. C. Shei, "ICP etching of sapphire substrates", Optical Mater., Vol. 27, No. 6, pp. 1171-1174. (2005) (SCI)
23. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei and H. M. Lo, “Nitride-based flip-chip ITO LEDs”, IEEE Trans on Advanced Packaging, Vol. 28, No. 2, pp.273-277, May 2005 (SCI)
24. C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H. M. Lo, “Nitride based Power Chip with ITO p-Contact and Al back-side Reflector”, Jpn. J. Appl. Phys., Vol. 44, Part 1, No. 4B, pp.2462-2464. (2005) (SCI)
25. W. S. Chen, S. J. Chang, Y. K. Su, R. L. Wang, C. H. Kuo and S. C. Shei , “AlxGa1-xN/GaN teterostructure field effect transistors with various Al mole fraction in AlGaN barrier”, J. Crystal Growth, Vol.275, pp.398-403. (2005) (SCI)
26. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, “Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent Contact”, IEEE Photon. Technol. Lett., Vol. 16, No. 4, pp. 1002-1004, April 2004 (SCI)
27. C. S. Chang, S. J. Chang, Y. K. Su, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke and H. M. Lo, “Nitride-Based LEDs With Textured Side Walls”, IEEE Photon. Technol. Lett., Vol. 16, No. 3, pp. 750-752, May 2004 (SCI)
28. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang and S. C. Shei, “Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs”, J. Crystal Growth., Vol 261, pp.466-470. (2004) (SCI)
29. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, “Highly Reliable Nitride-Based LEDs With SPS+ITO Upper Contacts”, IEEE Journal of Quantum Electronics, Vol. 39, No. 11, pp. 1439-1443, November 2003 (SCI)
30. S. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T. C. Wen, S. C. Shei, C. W. Kuo, and D. H. Fang, “MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates”, Phys. Stat. Sol. (C), No.7, pp. 2227-2231. (2003) (SCI)
31. C. S. Chang, S. J. Chang, 1, Y. K. Su, W. C. Lai, C. H. Kuo, C. K. Wang, Y. C. Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, “High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode”, Phys. Stat. Sol. (C), No.7, pp. 2253-2256, October 2003 (SCI)
32. C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, and J. K. Sheu, “High Brightness InGaN Green LEDs With an ITO on n++-SPS Upper Contact”, IEEE Trans Electron. Dev., Vol. 50, No. 11, pp. 2208-2212, November 2003 (SCI)
33. S. J. Chang, Y. C. Lin, Y. K. Su, C. S. Chang, T. C. Wen, S. C. Shei, J. C. Ke, C. W. Kuo, S. C. Chen and C. H. Liu, “ Nitride-based LEDs fabricated on patterned sapphire substrates”, Solid State Electron, Vol. 47, pp. 1539-1542. (2003) (SCI)
34. Y. C. Lin, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen and C. W. Kuo, ”High power nitride based light emitting diodes with Ni/ITO p-type contacts”, Solid State Electron, Vol. 47, pp. 1565-1568. (2003) (SCI)
35. Y. P. Hsu, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei. Y. C. Lin, C. H. Kuo, L. W. Wu and S. C. Chen, "InGaN/GaN light emitting diodes with a reflector at the backside of sapphire substrates", J. Electron. Material Vol. 32, No. 5, pp. 403-405. (2003) (SCI)
36. C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hus, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen and C. H. Liu, “InGaN/GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts”, Jpn. J. Appl. Phys. Part 1, Vol. 42, No. 6A. pp.3324–3327 (2003) (SCI)
37. C. S. Chang, S. J. Chang, Y. K. Su, Y. C. Lin, Y. P. Hsu, S. C. Shei, S. C. Chen, C. H. Liu and U. H. Liaw, “InGaN/GaN light emitting diodes with ITO p-contact layers prepared by RF sputtering”, Semicond. Sci. Technol. Vol. 18, L21–L23. (2003) (SCI)
38. Y. C. Lin, S. J. Chang, Y. K. Su, T.Y. Tsai, C. S. Chang, S. C. Shei, C. W. Kuo and S. C. Chen, “InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts”, Solid State Electron, Vol. 47, pp. 849-853. (2003) (SCI)
39. Y. C. Lin a, S. J. Chang a, Y. K. Su, S. C. Shei and S. J. Hsu, “Inductively coupled plasma etching of GaN using Cl2/He gases”, Materials Science and Engineering B98 pp. 60-64. (2003) (SCI)
40. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen, and B. R. Huang, “Nitride-Based Light-Emitting Diodes With Ni/ITO p-Type Ohmic Contacts”, IEEE Photon. Technol. Lett., Vol. 14, No. 12, pp. 1668-1670. (2002) (SCI)
41. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang and G. C. Chi, "Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer", IEEE Electron. Dev. Lett., Vol. 22, No. 10, pp. 460-462. (2001) (SCI)
42. D. P. Wang, C. T. Chen, H. Kuan, S. C. Shei, and Y. K. Su, “Study on symmetry forbidden transitions in InxGa1-xAs/GaAs single quantum well by temperature dependence” J. Appl. Phys., Vol. 77, No. 12, pp.6500-6503 (1995). (SCI)
43. S. C. Shei, Y. K. Su, and M. Yokoyama, “Heterostructure Fe:InP/InGaAs metal-semiconductor field-effect transistors grown by metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys., Vol.34, No.3, pp.1413-1416, (1995). (SCI)
44. S. C. Shei, Y. K. Su, C. J. Hwang, and M. Yokoyama, “SiO2/InP structure prepared by direct photo-chemical vapor deposition using deuterium lamp and its applications to metal-oxide-semiconductor field-effect transistor,”Jpn. J. Appl. Phys., Vol.34, No2, pp.476-481, (1995). (SCI)
45. S. C. Shei, Y. K. Su, C. J. Hwang, and M. Yokoyama, “Compositional and electrical properties of Si metal-oxide-semiconductor structure prepared by direct photo-enhanced chemical vapor deposition using deuterium lamp,”J. Vac. Sci.Technol. A, Vol.13, No.2, pp.237-243, (1995). (SCI)
46. Y. Z. Juang, Y. K. Su, S. C. Shei, and B. C. Fang, “Comparing reactive ion etching of Ⅲ-Ⅴ compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges,” J. Vac. Sci. Technol. A, Vol.12, No.1, pp.75-82, (1994). (SCI)
47. Y. K. Su, Y. Z. Jung, S. C. Shei, and B. C. Fang, “A study of selective and nonselective reactive ion etching of GaAs/AlGaAs Materials,” Solid State Electronics, Vol.36, No.12, pp.1779-1785, (1993). (SCI)
48. Y. K. Su, S. C. Shei, and C. H. Chen, “Low-frequency noise in InP-based double hetrojunction bipolar transistors,” Appl. Phys. Lett., Vol.61, No.13,pp.1756-1758, (1992). (SCI)

B. Conference papers
1. Y. P. Hsu, S. J. Chang, Y. K. Su, W. S. Chan, J. K. Sheu, J. Y. Chu and C. T. Kuo, S. C. Shei “ High Brightness and Crack-free InGaN/GaN Light Emitting Diode with AlGaN buffer layer on Si(111)”, International Conference on Solid State Devices and Materials, 2007.
2. C. F. Shen, S. J. Chang, S. C. Shei, C. S. Chang, W. S. Chen, T. K. Ko and Y. Z. Chiou,” High Reliable Nitride Based LEDs with Internal ESD Protection”, 2006 SSDM
3. S. J. Chang, W. S. Chen, Y. K. Su, C. S. Chang, Y. C. Lin, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai and S. C. Shei, , “Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors”, 2005 TWHM
4. T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, W. S. Chen, and C. F. Shen, “Nitride-based p-i-n photodetectors with ITO p-contacts”, 2005 International Conference on Solid State Devices and Materials, Kobe, pp. 348-349, 2005 SSDM
5. S. C. Shei, C. S. Chang, S. J. Chang, Y. K. Su, “High Brightness InGaN/GaN LEDs with ESD Protection “, 2005 International Conference on Solid State Devices and Materials, 2005 SSDM.
6. C. S. Chang, S. J. Chang, Y. K. Su, C. F. Shen, W. S. Chen, T. K. Ko, H. M. Lo, S. C. Shei and T. M. Kuo, “Nitride-based Light Emitting Diodes With Electrostatic Discharge Protection”, 6th Topical Workshop on Heterostructure Microelectronics, 2005 TWHM.
7. C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H. M. Lo, “Nitride based Power Chip with ITO p-Contact and Al back-side Reflector”, 2004 International Conference on Solid State Devices and Materials, 2004 SSDM.C
8. C. S. Chang, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, C. K. Wang, Y. C. Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, “High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode”, 2003 International Conference on Nitride Semiconductors, 2003 ICNS-5.
 
研究計劃 (至少五年內)
A、國科會專題研究計劃
1.具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫(98-3114-E-009-002-CC2) 行政院國家科學委員會 2009/12/01 ~ 2010/12/31 執行中 共同主持人
2.氮化鎵在矽基板上高電壓蕭特基二極體之研究(98-2622-E-024-001-CC3) 行政院國家科學委員會 2009/07/01 ~ 2010/06/30 主持人
3.在矽基板上高銦含量之氮化銦鎵結構高效率太陽能電池之研究(97-2221-E-024-003-) 行政院國家科學委員會 2008/08/01 ~ 2009/10/31 主持人
4.高效率及高可靠度氮化鎵系列交流發光二極體之研究(97-2622-E-024-001-CC3) 行政院國家科學委員會 2008/08/01 ~ 2009/10/31 主持人
5.在矽基板上三族氮化物高效率光伏元件之研究(96-2221-E-024-005-) 行政院國家科學委員會 2007/08/01 ~ 2008/07/31 主持人
6.氮化鎵在矽基板上之紫外光檢測器研究(96-2622-E-024-001-CC3) 行政院國家科學委員會 2007/05/01 ~ 2008/04/30 主持人

B、產學合作計劃
1.高效率高壓操作氮化物發光二極體之研製 主持人 2007/8/1 至 2008/7/31 海立爾股份有限公司
2.以電子束成長ITO透明導電層改善計畫
(南部傳統產業科技關懷計畫) 主持人 2007/9/1∼2008/5/31 勤普科技有限公司

C、其它機構補助申請
1.以晶片黏合技術研製高效率氮化鎵發光二極體(93-1003-B045-004) 主持人 2004/04/01 - 2005/03/31 科學園區創新計劃
2.氮化鎵紫外光檢測器之研製(91-1005-B045-005) 主持人 2002/10/01 - 2003/09/30 科學園區創新計劃
3.六吋磷化銦鎵/砷化鎵異質接面雙極性電晶體磊晶片之研製(90-1006-B045-007) 主持人 2001/09/01 - 2002/08/31 科學園區創新計劃
 
 
 
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